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DMNH6012SPS Datasheet(PDF) 3 Page - Diodes Incorporated

Part # DMNH6012SPS
Description  N-CHANNEL ENHANCEMENT MODE MOSFET
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMNH6012SPS Datasheet(HTML) 3 Page - Diodes Incorporated

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DMNH6012SPS
Document number: DS38084 Rev. 3 - 2
3 of 8
www.diodes.com
April 2016
© Diodes Incorporated
DMNH6012SPS
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BVDSS
60
V
VGS = 0V, ID = 250μA
Zero Gate Voltage Drain Current, TJ = +25°C
IDSS
1
µA
VDS = 60V, VGS = 0V
Gate-Source Leakage
IGSS
±100
nA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
VGS(TH)
2
4
V
VDS = VGS, ID = 250μA
Static Drain-Source On-Resistance
RDS(ON)
8
11
m
VGS = 10V, ID = 50A
Diode Forward Voltage
VSD
0.7
1.2
V
VGS = 0V, IS = 1.7A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
CISS
1,926
pF
VDS = 30V, VGS = 0V,
f = 1MHz
Output Capacitance
COSS
330
pF
Reverse Transfer Capacitance
CRSS
112
pF
Gate Resistance
RG
2.0
VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge (VGS = 4.5V)
QG
16.3
nC
VDS = 30V, ID = 25A
Total Gate Charge (VGS = 10V)
QG
35.2
nC
Gate-Source Charge
QGS
7.6
nC
Gate-Drain Charge
QGD
6.9
nC
Turn-On Delay Time
tD(ON)
6.4
ns
VGS = 10V, VDS = 30V,
RG = 3Ω, ID = 25A
Turn-On Rise Time
tR
11.9
ns
Turn-Off Delay Time
tD(OFF)
16.5
ns
Turn-Off Fall Time
tF
5
ns
Body Diode Reverse Recovery Time
tRR
28
ns
IF = 25A, di/dt = 100A/μs
Body Diode Reverse Recovery Charge
QRR
23
nC
Notes:
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.


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