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SP708REP Datasheet(PDF) 2 Page - Sipex Corporation |
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SP708REP Datasheet(HTML) 2 Page - Sipex Corporation |
2 / 18 page 2 Rev. 10-17-00 SP706 +3.0/ +3.3 Low Power Microprocessor Circuits © Copyright 2000 Sipex Corporation SPECIFICATIONS V cc = 2.7V to 5.5V for SP70_P/R, VCC = 3.0 to 5.5V for SP70_S, VCC = 3.15V to 5.5V for SP70_T, TA= TMIN to TMAX to TMAX, unless otherwise noted, typical at 25 °C. ABSOLUTE MAXIMUM RATINGS These are stress ratings only and functional operation of the device at these ratings or any other above those indicated in the operation sections of the specifications below is not implied. Exposure to absolute maximum rating conditions for extended periods of time may affect reliability. Terminal Voltage (with respect to GND): V CC........................................................-0.3V to +6.0V All Other Inputs (Note 1)..............-0.3V to (V CC +3.0V) Input Current: V CC.....................................................................20mA GND...................................................................20mA Output Current (all outputs)...............................20mA ESD Rating...........................................................2kV R E T E M A R A P. N I M. P Y T. X A MS T I N US N O I T I D N O C V , e g n a R e g a t l o V g n i t a r e p O C C 0 . 15 . 5V I , t n e r r u C y l p p u S Y L P P U S 5 20 4 µA V = R M C C g n i t a o l F I D W , g n i t a o l F r o d l o h s e r h T t e s e R5 5 . 2 5 8 . 2 0 0 . 3 3 6 . 2 3 9 . 2 8 0 . 3 0 7 . 2 0 0 . 3 5 1 . 3 V R / P _ 0 7 P S S _ 0 7 P S T _ 0 7 P S s i s e r e t s y H d l o h s e r h T t e s e R0 2V m2 e t o N t , h t d i W e s l u P t e s e R S R 0 4 10 0 20 8 2s m2 e t o N T E S E Re g a t l o V t u p t u O V H O V L O V H O V L O V x 8 . 0 C C V C C 5 . 1 - 3 . 0 4 . 0 V V ) X A M ( T S R V < C C I , V 6 . 3 < E C R U O S 0 0 5 = µA V ) X A M ( T S R V < C C I , V 6 . 3 < K N I S 2 . 1 =mA V < V 5 . 4 C C I , V 5 . 5 < E C R U O S 0 0 8 = µA V < V 5 . 4 C C I , V 5 . 5 < K N I S A m 2 . 3 = e g a t l o V t u p t u O T E S E R V H O V L O V H O V L O V C C 6 . 0 - V C C 5 . 1 - 3 . 0 4 . 0 V V ) X A M ( T S R V < C C I , V 6 . 3 < E C R U O S 5 1 2 = µA V ) X A M ( T S R V < C C I , V 6 . 3 < E C R U O S A m 2 . 1 = V < V 5 . 4 C C I , V 5 . 5 < E C R U O S 0 0 8 = µA V < V 5 . 4 C C I , V 5 . 5 < E C R U O S A m 2 . 3 = t , d o i r e P t u o e m i T g o d h c t a W D W 0 0 . 10 6 . 15 2 . 2s V C C V 6 . 3 < t , h t d i W e s l u P I D W P W 0 5s nV L I V , V 4 . 0 = H I V x 8 . 0 = C C , d l o h s e r h T t u p n I I D W V L I V H I V L I V H I V x 7 . 0 C C 5 . 3 6 . 0 8 . 0 V V ) X A M ( T S R V < C C V 6 . 3 < V T S R) X A M ( V < C C V 6 . 3 < V C C V 0 . 5 = V C C V 0 . 5 = t n e r r u C t u p n I I D W1 -2 0 . 01 µA V r o 0 = I D W C C Continuous Power Dissipation Plastic DIP (derate 9.09mW/OC above +70OC)..................727mW SO (derate 5.88mW/OC above +70OC)..................471mW Mini SO (derate 4.10mW/OC above +70OC)..................330mW Storage Temperature Range.............-65˚C to +160˚C Lead Temperature (solding 10 sec)................+300˚C |
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