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TB6556FG Datasheet(PDF) 8 Page - Toshiba Semiconductor |
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TB6556FG Datasheet(HTML) 8 Page - Toshiba Semiconductor |
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TB6556FG 2012-10-22 8 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Supply voltage VCC 12 V Vin (1) −0.3 to VCC (Note 1) Input voltage Vin (2) −0.3 to Vrefout + 0.3 (Note 2) V Turn-on signal output current IOUT 2 mA Power dissipation PD 1.50 (Note 3) W Operating temperature Topr −30 to 115 (Note 4) °C Storage temperature Tstg −50 to 150 °C Note 1: Vin (1) pin: Ve, LA, Gin, Gout, PH, LPF, LL, UL Note 2: Vin (2) pin: HU, HV, HW, CW/CCW, RES, OS, Idc, Td, SS Note 3: When mounted on PCB (universal 50 mm 50 mm 1.6 mm, Cu 30%) Note 4: Operating temperature range is determined by the PD − Ta characteristic. Operating Conditions (Ta = 25°C) Characteristics Symbol Min Typ. Max Unit Supply voltage VCC 6 7 10 V Ceramic oscillation frequency Xin 2 4 8 MHz Ambient temperature Ta (°C) PD – Ta 0 0 2.0 (1) When mounted on PCB Universal 50 mm 50 mm 1.6 mm (2) IC only Rth (j-a) = 110°C/W 1.5 1.0 0.5 50 100 150 200 (2) (1) |
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