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CSD16406Q3 Datasheet(PDF) 5 Page - Texas Instruments |
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CSD16406Q3 Datasheet(HTML) 5 Page - Texas Instruments |
5 / 13 page TC - Case Temperature (°C) -75 -50 -25 0 25 50 75 100 125 150 175 1 1.2 1.4 1.6 1.8 2 2.2 D006 VGS - Gate-To-Source Voltage (V) 0 2 4 6 8 10 12 14 16 0 2 4 6 8 10 12 14 D007 TC = 25°C, I D = 20 A TC = 125°C, I D = 20 A Qg - Gate Charge (nC) 0 2 4 6 8 10 12 14 0 2 4 6 8 10 12 D004 VDS - Drain-to-Source Voltage (V) 0 5 10 15 20 25 1 10 100 1000 10000 D005 Ciss = Cgd + Cgs Coss = Cds + Cgd Crss = Cgd VDS - Drain-to-Source Voltage (V) 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0 20 40 60 80 100 D002 VGS = 4.5 V VGS = 5 V VGS = 10 V VGS - Gate-To-Source Voltage (V) 1.5 2 2.5 3 3.5 4 0 10 20 30 40 50 D003 TC = 125°C TC = 25°C TC = -55°C CSD16406Q3 www.ti.com SLPS202B – AUGUST 2009 – REVISED DECEMBER 2015 Typical MOSFET Characteristics (continued) (TA = 25°C unless otherwise stated) VDS = 5 V Figure 2. Saturation Characteristics Figure 3. Transfer Characteristics ID = 20 A VDS = 12.5 V Figure 5. Capacitance Figure 4. Gate Charge ID = 250 µA Figure 7. On Resistance vs Gate Voltage Figure 6. Threshold Voltage vs Temperature Copyright © 2009–2015, Texas Instruments Incorporated Submit Documentation Feedback 5 Product Folder Links: CSD16406Q3 |
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