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S-80745SN-D9-X Datasheet(PDF) 10 Page - Seiko Instruments Inc |
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S-80745SN-D9-X Datasheet(HTML) 10 Page - Seiko Instruments Inc |
10 / 42 page HIGH-PRECISION VOLTAGE DETECTOR S-807 Series Seiko Instruments Inc. 9 7. S-80720AL-AH-X, S-80720AN/AN-DH-X S-80720SL-AH-X, S-80720SN-DH-X (Detection voltage : 1.952 to 2.048 V) (Unless otherwise specified : Ta=25 °C) Parameter Symbol Conditions Min. Typ. Max. Unit Test circuit Detection voltage -VDET 1.952 2.000 2.048 V 1 Hysteresis width VHYS -VDET ×0.02 -VDET ×0.05 -VDET ×0.08 V1 Current consumption ISS VDD = 3.0 V 1.4 3.5 µA2 Operating voltage VDD 1.0 15.0 V 1 Output current IOUT Nch VDS = 0.5 V VDD = 1.2 V 0.23 0.50 mA 3 Pch (CMOS output) VDS = 0.5 V VDD = 4.8 V 0.36 0.62 4 Temperature characteristic of - VDET Ta=-30 °C to 80°C ±0.25 mV/ °C 8. S-80721AL/AL-AJ-X, S-80721AN/AN-DJ-X S-80721SL-AJ-X, S-80721SN-DJ-X (Detection voltage : 2.049 to 2.151 V) (Unless otherwise specified : Ta=25 °C) Parameter Symbol Conditions Min. Typ. Max. Unit Test circuit Detection voltage -VDET 2.049 2.100 2.151 V 1 Hysteresis width VHYS -VDET ×0.02 -VDET ×0.05 -VDET ×0.08 V1 Current consumption ISS VDD = 4.5 V 1.4 3.5 µA2 Operating voltage VDD 1.0 15.0 V 1 Output current IOUT Nch VDS = 0.5 V VDD = 1.2 V 0.23 0.50 mA 3 Pch (CMOS output) VDS = 0.5 V VDD = 4.8 V 0.36 0.62 4 Temperature characteristic of - VDET Ta=-30 °C to 80°C ±0.26 mV/ °C 9. S-80722AL/AL-AK-X, S-80722AN/AN-DK-X (Detection voltage : 2.147 to 2.253 V) (Unless otherwise specified : Ta=25 °C) Parameter Symbol Conditions Min. Typ. Max. Unit Test circuit Detection voltage -VDET 2.147 2.200 2.253 V 1 Hysteresis width VHYS -VDET ×0.02 -VDET ×0.05 -VDET ×0.08 V1 Current consumption ISS VDD = 4.5 V 1.4 3.5 µA2 Operating voltage VDD 1.0 15.0 V 1 Output current IOUT Nch VDS = 0.5 V VDD = 1.2 V 0.23 0.50 mA 3 Pch (CMOS output) VDS = 0.5 V VDD = 4.8 V 0.36 0.62 4 Temperature characteristic of - VDET Ta=-30 °C to 80°C ±0.28 mV/ °C ∆-V DET ∆Ta ∆-V DET ∆Ta ∆-V DET ∆Ta |
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