FQB3N60 datasheet(3/4 Pages) KERSEMI

Part #	FQB3N60

Description	This N-channel MOSFETS use advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.

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Manufacturer	KERSEMI [Kersemi Electronic Co., Ltd.]

Direct Link	http://www.kersemi.com

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KSMB3N60/FQB3N60

KERSMI ELECTRONIC CO.,LTD.

www.kersemi.com

3

Notes:

1. The data tested by surface mounted on a 1 inch²FR-4 board 2OZ copper.

2. The data tested by pulse width≤300us,duty cycle≤2%

3. The EAS data shows Max. rating. The test condition is VDD=25v,VGS=10V,L=0.1mH,iAS=17.8A

4. The power dissipation is limited by 150℃ junction temperature.

Typical Characteristics TJ=25℃ unless otherwise noted

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. Capacitance Characteristics

Figure 4. On-Resistance Variation vs.

Drain Current and Gate Voltage

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