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S-807 Datasheet(PDF) 12 Page - Seiko Instruments Inc |
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S-807 Datasheet(HTML) 12 Page - Seiko Instruments Inc |
12 / 42 page HIGH-PRECISION VOLTAGE DETECTOR S-807 Series Seiko Instruments Inc. 11 13. S-80725AH-BN-X (Detection voltage : 2.440 to 2.560 V) (Unless otherwise specified : Ta=25 °C) Parameter Symbol Conditions Min. Typ. Max. Unit Test circuit Detection voltage -VDET 2.440 2.500 2.560 V 1 Hysteresis width VHYS -VDET ×0.02 -VDET ×0.05 -VDET ×0.08 V1 Current consumption ISS VDD = 4.5 V 1.4 3.5 µA2 Operating voltage VDD 1.0 15.0 V 1 Output current IOUT Pch VDS = 0.5 V VDD = 1.2 V 0.03 0.09 mA 4 Nch VDS = 0.5 V VDD = 4.8 V 4.06 8.36 3 Temperature characteristic of - VDET Ta=-30 °C to 80°C ±0.31 mV/ °C 14. S-80726AL-AP-X, S-80726AN/AN-DP-X (Detection voltage : 2.537 to 2.663 V) (Unless otherwise specified : Ta=25 °C) Parameter Symbol Conditions Min. Typ. Max. Unit Test circuit Detection voltage -VDET 2.537 2.600 2.663 V 1 Hysteresis width VHYS -VDET ×0.02 -VDET ×0.05 -VDET ×0.08 V1 Current consumption ISS VDD = 4.5 V 1.0 3.0 µA2 Operating voltage VDD 1.0 15.0 V 1 Output current IOUT Nch VDS = 0.5 V VDD = 1.2 V 0.23 0.50 mA 3 Pch (CMOS output) VDS = 0.5 V VDD = 4.8 V 0.36 0.62 4 Temperature characteristic of - VDET Ta=-30 °C to 80°C ±0.33 mV/ °C 15. S-80727AL/AL-AQ-X, S-80727AN/AN-DQ-X S-80727SL-AQ-X, S-80727SN-DQ-X (Detection voltage : 2.635 to 2.765 V) (Unless otherwise specified : Ta=25 °C) Parameter Symbol Conditions Min. Typ. Max. Unit Test circuit Detection voltage -VDET 2.635 2.700 2.765 V 1 Hysteresis width VHYS -VDET ×0.02 -VDET ×0.05 -VDET ×0.08 V1 Current consumption ISS VDD = 4.5 V 1.0 3.0 µA2 Operating voltage VDD 1.0 15.0 V 1 Output current IOUT Nch VDS = 0.5 V VDD = 1.2 V 0.23 0.50 mA 3 VDD = 2.4 V 1.60 3.70 Pch (CMOS output) VDS = 0.5 V VDD = 4.8 V 0.36 0.62 4 Temperature characteristic of - VDET Ta=-30 °C to 80°C ±0.34 mV/ °C ∆-V DET ∆Ta ∆-V DET ∆Ta ∆-V DET ∆Ta |
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