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STGF7NB60SL Datasheet(PDF) 2 Page - STMicroelectronics |
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STGF7NB60SL Datasheet(HTML) 2 Page - STMicroelectronics |
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2 / 9 page  STGF7NB60SL 2/9 Table 3: Absolute Maximum ratings (1)Pulse width limited by max. junction temperature. Table 4: Thermal Data ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table 5: Off Table 6: On Symbol Parameter Value Symbol VCES Collector-Emitter Voltage (VGS = 0) 600 V VECR Reverse Battery Protection 20 V VGE Gate-Emitter Voltage ± 20 V IC Collector Current (continuous) at 25°C15 A IC Collector Current (continuous) at 100°C7 A ICM (1) Collector Current (pulsed) 20 A PTOT Total Dissipation at TC = 25°C 25 W Derating Factor 0.2 W/°C VISO Insulation Withstand Voltage A.C. 2500 V Tstg Storage Temperature – 55 to 150 °C Tj Operating Junction Temperature Rthj-case Thermal Resistance Junction-case Max 5 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Symbol Parameter Test Conditions Min. Typ. Max. Unit VBR(CES) Collectro-Emitter Breakdown Voltage IC = 250 µA, VGE = 0 600 V VBR(ECS) Emitter-Collector Breakdown Voltage IC = 1mA, VGE = 0 20 V ICES Collector-Emitter Leakage Current (VCE = 0) VGE = Max Rating Tc=25°C Tc=125°C 10 100 µA µA IGES Gate-Emitter Leakage Current (VCE = 0) VGE = ± 20 V , VCE = 0 ±100 nA Symbol Parameter Test Conditions Min. Typ. Max. Unit VGE(th) Gate Threshold Voltage VCE= VGE, IC= 250 µA 1.2 2.4 V VCE(SAT) Collector-Emitter Saturation Voltage VGE=4.5 V, IC= 7A, Tj= 25°C VGE=4.5 V, IC= 7A, Tj= 125°C 1.2 1.1 1.6 V V |
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