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PMA-545 Datasheet(PDF) 2 Page - Mini-Circuits

Part # PMA-545
Description  Monolithic Amplifier
Download  6 Pages
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Manufacturer  MINI [Mini-Circuits]
Direct Link  http://www.minicircuits.com
Logo MINI - Mini-Circuits

PMA-545 Datasheet(HTML) 2 Page - Mini-Circuits

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Low Noise, High IP3
Monolithic Amplifier
Notes
A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document.
B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions.
C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled
to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp
Mini-Circuits®
www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com
Page 2 of 2
Product Features
Typical Applications
• Cellular
• ISM
• GSM
• WCDMA
• LTE
• WiMAX
• WLAN
• UNII and HIPERLAN
General Description
PMA-545+ is a high dynamic range, low noise, high IP3, high output power, monolithic amplifier. Manu-
factured using E-PHEMT* technology enables it to work with a single positive supply voltage. Uncondi-
tionally stable over the operating frequency.
REV. D
M151107
PMA-545+
ED-13485
TH/RS/CP/AM
150924
0.05-6 GHz
PMA-545+
CASE STYLE: DQ849
simplified schematic and pad description
RF-IN
RF-OUT
and DC
BIAS
Function
Pad
Number
Description (See Application Circuit, Fig. 2)
RF-IN
1
RF input pad
RF-OUT & DC
6
RF output pad (connected to RF-OUT via blocking external cap C2, and Supply
voltage Vs via RF Choke L1)
BIAS
7
Bias pad (connected to Vs via Rbias)
GND
paddle in center of bottom
Connected to ground
NOT USED
2,3,4,5,8
No internal connection; recommended use: per PCB Layout PL-299
*Enhancement mode Pseudomorphic High Electron Mobility Transistor.
☛ LTE Performance
RF-IN (1)
NC (2)
RF-OUT & DC (6)
GND
NC (5)
NC (8)
BIAS (7)
NC (3)
NC (4)
+RoHS Compliant
The +Suffix identifies RoHS Compliance. See our web site
for RoHS Compliance methodologies and qualifications
• Single Positive Supply Voltage, 3V
• Ultra Low Noise Figure, 0.8 dB typ. at 1GHz
• High IP3, 36 dBm typ. 1GHz
• Gain, 20dB typ. at 1 GHz
• Output Power, up to +20dBm typ.
• Micro-miniature size - 3mm x 3mm
• Aqueous washable


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