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PMA-545 Datasheet(PDF) 2 Page - Mini-Circuits |
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PMA-545 Datasheet(HTML) 2 Page - Mini-Circuits |
2 / 6 page Low Noise, High IP3 Monolithic Amplifier Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits® www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com Page 2 of 2 Product Features Typical Applications • Cellular • ISM • GSM • WCDMA • LTE • WiMAX • WLAN • UNII and HIPERLAN General Description PMA-545+ is a high dynamic range, low noise, high IP3, high output power, monolithic amplifier. Manu- factured using E-PHEMT* technology enables it to work with a single positive supply voltage. Uncondi- tionally stable over the operating frequency. REV. D M151107 PMA-545+ ED-13485 TH/RS/CP/AM 150924 0.05-6 GHz PMA-545+ CASE STYLE: DQ849 simplified schematic and pad description RF-IN RF-OUT and DC BIAS Function Pad Number Description (See Application Circuit, Fig. 2) RF-IN 1 RF input pad RF-OUT & DC 6 RF output pad (connected to RF-OUT via blocking external cap C2, and Supply voltage Vs via RF Choke L1) BIAS 7 Bias pad (connected to Vs via Rbias) GND paddle in center of bottom Connected to ground NOT USED 2,3,4,5,8 No internal connection; recommended use: per PCB Layout PL-299 *Enhancement mode Pseudomorphic High Electron Mobility Transistor. ☛ LTE Performance RF-IN (1) NC (2) RF-OUT & DC (6) GND NC (5) NC (8) BIAS (7) NC (3) NC (4) +RoHS Compliant The +Suffix identifies RoHS Compliance. See our web site for RoHS Compliance methodologies and qualifications • Single Positive Supply Voltage, 3V • Ultra Low Noise Figure, 0.8 dB typ. at 1GHz • High IP3, 36 dBm typ. 1GHz • Gain, 20dB typ. at 1 GHz • Output Power, up to +20dBm typ. • Micro-miniature size - 3mm x 3mm • Aqueous washable |
Similar Part No. - PMA-545_15 |
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Similar Description - PMA-545_15 |
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