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PMA2-162LN Datasheet(PDF) 3 Page - Mini-Circuits

Part # PMA2-162LN
Description  Monolithic Amplifier
Download  5 Pages
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Manufacturer  MINI [Mini-Circuits]
Direct Link  http://www.minicircuits.com
Logo MINI - Mini-Circuits

PMA2-162LN Datasheet(HTML) 3 Page - Mini-Circuits

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Monolithic E-PHEMT MMIC Amplifier
Notes
A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document.
B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions.
C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled
to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp
Mini-Circuits®
www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com
Page 3 of 5
Parameter
Ratings
Operating Temperature (ground lead)
-40°C to 85°C
Storage Temperature
-65°C to 150°C
Junction Temperature
150°C
Total Power Dissipation
0.55 W
Input Power (CW), Vd=4V
25 dBm
DC Voltage
5.5V
Note:
Permanent damage may occur if any of these limits are exceeded.
Electrical maximum ratings are not intended for continuous normal operation.
Absolute Maximum Ratings
Electrical Specifications(1,2) at 25°C and 4V, unless noted
PMA2-162LN+
Parameter
Condition
(GHz)
R1=267Ω (1)
R1=93Ω (2)
Units
Min.
Typ.
Max.
Min.
Typ.
Max.
Frequency Range
0.7
1.6
0.7
1.6
GHz
(1) Measured on Mini-Circuits Characterization test board TB-615+. See Characterization Test Circuit (Fig. 1) R1=267Ω
(2) Measured on Mini-Circuits Characterization test board TB-615+. See Characterization Test Circuit (Fig. 1) R1=93Ω
(3) Current increases at P1dB
(4) (Current at 85°C - Current at -45°C)/130
DC Current (mA)
Noise Figure
0.7
0.55
0.57
dB
0.8
0.51
0.54
1.0
0.47
0.48
1.3
0.64
0.65
1.6
0.80
0.81
Gain
0.7
24.4
22.7
dB
0.8
24.1
22.2
1.0
20.9
22.7
24.5
18.6
20.8
23.1
1.3
20.7
19.1
1.6
18.8
17.7
Input Return Loss
0.7
9.5
11.5
dB
0.8
15.5
18.8
1.0
17.9
20.0
1.3
12.4
14.5
1.6
10.8
12.4
Output Return Loss
0.7
13.6
21.6
dB
0.8
16.1
17.8
1.0
18.9
16.0
1.3
15.6
15.1
1.6
10.7
11.6
Output Power @1 dB compression(3)
0.7
19.5
18.3
dBm
0.8
19.8
18.9
1.0
19.9
19.7
1.3
19.7
19.8
1.6
18.8
19.0
Output IP3
0.7
29.1
28.3
dBm
0.8
30.3
29.5
1.0
30.0
29.0
1.3
30.1
29.2
1.6
29.4
28.5
Device Operating Voltage
3.8
4.0
4.2
3.8
4.0
4.2
V
Device Operating Current at 4V
55
60
55
60
mA
Device Current Variation vs. Temperature at 4V(4)
2
2
µA/°C
Device Current Variation vs Voltage at 25°C
0.016
0.016
mA/mV
Thermal Resistance, junction-to-ground lead
53
53
°C/W


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