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TPS76325QDBVRQ1 Datasheet(PDF) 4 Page - Texas Instruments |
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TPS76325QDBVRQ1 Datasheet(HTML) 4 Page - Texas Instruments |
4 / 24 page 4 TPS763-Q1, TPS76301-Q1, TPS76316-Q1, TPS76318-Q1 TPS76325-Q1, TPS76330-Q1, TPS76333-Q1, TPS76350-Q1 SGLS247B – SEPTEMBER 2011 – REVISED MARCH 2016 www.ti.com Product Folder Links: TPS763-Q1 TPS76301-Q1 TPS76316-Q1 TPS76318-Q1 TPS76325-Q1 TPS76330-Q1 TPS76333-Q1 TPS76350-Q1 Submit Documentation Feedback Copyright © 2011–2016, Texas Instruments Incorporated (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 7 Specifications 7.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) MIN MAX UNIT Input voltage –0.3 10 V Voltage at EN V Voltage on OUT, FB V Peak output current Internally limited Operating junction temperature, TJ –40 150 °C Storage temperature, Tstg –65 150 °C (1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification. 7.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human-body model (HBM), per AEC Q100-002(1) ±2000 V Charged-device model (CDM), per AEC Q100-011 ±500 7.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN NOM MAX UNIT Input voltage, VI 2.7 10 V Continuous output current, IO 0 150 mA Operating junction temperature, TJ –40 125 °C (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953. 7.4 Thermal Information THERMAL METRIC(1) TPS763xx-Q1 UNIT DBV (SOT-23) 5 PINS RθJA Junction-to-ambient thermal resistance 205.2 °C/W RθJC(top) Junction-to-case (top) thermal resistance 11.83 °C/W RθJB Junction-to-board thermal resistance 34.8 °C/W ψJT Junction-to-top characterization parameter 12.2 °C/W ψJB Junction-to-board characterization parameter 33.9 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance N/A °C/W |
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