5

LM5107

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SNVS333E – NOVEMBER 2004 – REVISED MARCH 2016

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Copyright © 2004–2016, Texas Instruments Incorporated

(1)

Min and Max limits are 100% production tested at 25°C. Limits over the operating temperature range are specified through correlation

using Statistical Quality Control (SQC) methods. Limits are used to calculate Average Outgoing Quality Level (AOQL).

(2)

The

(3)

4 layer board with Cu finished thickness 1.5/1/1/1.5 oz. Maximum die size used. 5x body length of Cu trace on PCB top. 50 x 50mm

ground and power planes embedded in PCB. See Application Note AN-1187.

6.4

Electrical Characteristics

Symbol

Parameter

Conditions

Typ

Units

SUPPLY CURRENTS

LI = HI = 0V

0.3

0.6

mA

f = 500 kHz

2.1

3.4

mA

Total HB Quiescent Current

LI = HI = 0V

0.06

0.2

mA

Total HB Operating Current

f = 500 kHz

1.6

3.0

mA

0.1

10

µA

f = 500 kHz

0.5

mA

INPUT PINS LI and HI

Low Level Input Voltage Threshold

0.8

1.8

V

High Level Input Voltage Threshold

1.8

2.2

V

Input Pulldown Resistance

100

180

500

k

Ω

UNDER VOLTAGE PROTECTION

6.0

6.9

7.4

V

0.5

V

HB Rising Threshold

5.7

6.6

7.1

V

HB Threshold Hysteresis

0.4

V

BOOT STRAP DIODE

Low-Current Forward Voltage

0.58

0.9

V

High-Current Forward Voltage

0.82

1.1

V

Dynamic Resistance

0.8

1.5

Ω

LO GATE DRIVER

Low-Level Output Voltage

0.28

0.45

V

High-Level Output Voltage

0.45

0.75

V

Peak Pullup Current

1.3

A

Peak Pulldown Current

1.4

A

HO GATE DRIVER

Low-Level Output Voltage

0.28

0.45

V

High-Level Output Voltage

0.45

0.75

V

Peak Pullup Current

1.3

A

Peak Pulldown Current

1.4

A

THERMAL RESISTANCE

(2)

Junction to Ambient

SOIC

160

°C/W

40