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LS3955 Datasheet(PDF) 1 Page - Linear Integrated Systems |
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LS3955 Datasheet(HTML) 1 Page - Linear Integrated Systems |
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1 / 2 page  Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 Doc 201130 05/07/2014 Rev#A11 ECN# LS3954A LS3954 LS3955 LS3956 LS3958 FEATURES LOW DRIFT I ΔVGS1-2/ΔT│=5µV/°C max. LOW LEAKAGE IG=20pA TYP. LOW NOISE en =10Nv/√Hz TYP. ABSOLUTE MAXIMUM RATINGS1 @ 25 °C (unless otherwise noted) Maximum Temperatures Storage Temperature -55 to +150°C Operating Junction Temperature -55 to +150°C Maximum Voltage and Current for Each Transistor1 -VGSS Gate Voltage to Drain or Source 60V -IG(f) Gate Forward Current 50mV Maximum Power Dissipation Device Dissipation @ Free Air - Total 400mW @ 25ºC2 ELECTRICAL CHARACTERISTICS @ 25ºC (unless otherwise noted) SYMBOL CHARACTERISTIC LS3954A LS3954 LS3955 LS3956 LS3958 UNITS CONDITIONS │∆VGS1-2/∆T│max. Drift vs. Temperature 5 10 25 50 100 µV/ºC VDG = 20V, ID=200µA TA = -55ºC to +125ºC │VGS1-2│max. Offset Voltage 5 5 10 15 25 mV VDG =20V, ID=200µA SYMBOL CHARACTERISTIC MIN. TYP. MAX. UNITS CONDITIONS BVGSS Breakdown Voltage 60 -- -- V VDS= 0 IG= 1µA BVGGO Gate-to-Gate Breakdown 60 -- -- V IGG= ±1µA ID= 0 IS= 0 TRANSCONDUCTANCE gfss Full Conduction 1000 2000 4000 µS VDG= 20V VGS= 0 f = 1kHz gfs Typical Operation 500 700 1250 µS VDG= 20V ID= 200µA │gfs1-2/gfs│ Differential -- ±0.6 ±3 % DRAIN CURRENT IDSS Full Conduction 0.5 2 5 mA VDS= 20V VGS= 0 │IDSS1-2/IDSS│ Differential -- ±1 ±5 % GATE VOLTAGE VGS(off) Pinchoff Voltage -1 -2 -4.5 V VDS= 20V ID= 1nA VGS Operating Range -0.5 -- -4 V VDS= 20V ID= 200µA GATE CURRENT -IG Operating -- 20 50 pA VDG= 20V ID= 200µA -IG High Temperature -- -- 50 nA VDG= 20V ID= 200µA TA=+125 ºC -IG Reduced VDG -- 5 -- pA VDG= 10V ID= 200µA -IGSS At Full Conduction -- -- 100 pA VDG= 20V VDS= 0 LS3954A LS3954 LS3955 LS3956 LS3958 LOW NOISE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET AMPLIFIER Top View SOIC Top View TO-71 & TO-78 |
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