Electronic Components Datasheet Search |
|
3N190 Datasheet(PDF) 1 Page - Linear Integrated Systems |
|
3N190 Datasheet(HTML) 1 Page - Linear Integrated Systems |
1 / 2 page Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 Doc 201140 05/15/2014 Rev#A7 ECN# 3N190 3N191 FEATURES DIRECT REPLACEMENT FOR INTERSIL 3N190 & 3N191 LOW GATE LEAKAGE CURRENT IGSS ≤ ±10pA LOW TRANSFER CAPACITANCE Crss ≤ 1.0pF ABSOLUTE MAXIMUM RATINGS1 @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature -65 to +150 °C Operating Junction Temperature -55 to +135 °C Maximum Power Dissipation @ TA=25ºC Continuous Power Dissipation One Side 300mW Continuous Power Dissipation Both Sides 525mW Maximum Current Drain to Source2 50mA Maximum Voltages Drain to Gate2 30V Drain to Source2 30V Gate to Gate ±80V ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) (VSB = 0V unless otherwise stated) SYMBOL CHARACTERISTIC MIN TYP MAX UNITS CONDITIONS BVDSS Drain to Source Breakdown Voltage -40 V ID = -10µA BVSDS Source to Drain Breakdown Voltage -40 IS = -10µA, VBD = 0V VGS Gate to Source Voltage -3.0 -6.5 VDS = -15V, ID = -500µA VGS(th) Gate to Source Threshold Voltage -2.0 -5.0 VDS = VGS, ID = -10µA -2.0 -5.0 VDS = -15V, ID = -500µA IGSSR Reverse Gate Leakage Current 10 pA VGS = 40V IGSSF Forward Gate Leakage Current -10 VGS = -40V IDSS Drain Leakage Current "Off" -200 VDS = -15V ISDS Source to Drain Leakage Current "Off" -400 VSD = -15V, VDB = 0V ID(on) Drain Current "On"3 -5.0 -30.0 mA VDS = -15V, VGS = -10V IG1G2 Gate to Gate Isolation Current - ±1.0 µA VG1G2 = ±80V, ID = IS = 0 = mA MATCHING CHARACTERISTICS @ 25 °C (unless otherwise stated) (VBS = 0V unless otherwise stated) SYMBOL CHARACTERISTIC MIN TYP MAX UNITS CONDITIONS fs2 fs1 g g Forward Transconductance Ratio 0.85 1.0 VDS = -15V, ID = -500µA, f = 1kHz VGS1-2 Gate to Source Threshold Voltage Differential 100 mV VDS = -15V, ID = -500µA ΔT ΔV 2 GS1 Gate to Source Threshold Voltage Differential with Temperature4 100 C μV VDS = -15V, ID = -500µA TS = -55 to +25 °C ΔT ΔV 2 GS1 Gate to Source Threshold Voltage Differential with Temperature4 100 VDS = -15V, ID = -500µA TS = +25 to +125 °C 3N190 3N191 P-CHANNEL DUAL MOSFET ENHANCEMENT MODE TO-78 TOP VIEW case & substrate |
Similar Part No. - 3N190_14 |
|
Similar Description - 3N190_14 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |