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CSD19506KTTT Datasheet(PDF) 6 Page - Texas Instruments |
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CSD19506KTTT Datasheet(HTML) 6 Page - Texas Instruments |
6 / 13 page TC - Case Temperature (°C) -50 -25 0 25 50 75 100 125 150 175 200 0 25 50 75 100 125 150 175 200 225 D012 VDS - Drain-to-Source Voltage (V) 0.1 1 10 100 0.1 1 10 100 1000 D010 DC 10 ms 1 ms 100 µs TAV - Time in Avalanche (ms) 0.01 0.1 1 10 100 500 D011 TC = 25qC TC = 125qC 6 CSD19506KTT SLPS586 – MARCH 2016 www.ti.com Product Folder Links: CSD19506KTT Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated Typical MOSFET Characteristics (continued) (TA = 25°C unless otherwise stated) Single Pulse, Max RθJC = 0.4°C/W Figure 10. Maximum Safe Operating Area Figure 11. Single Pulse Unclamped Inductive Switching Figure 12. Maximum Drain Current vs Temperature |
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