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SKI04044 Datasheet(PDF) 2 Page - Sanken electric |
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SKI04044 Datasheet(HTML) 2 Page - Sanken electric |
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2 / 8 page  SKI04044 SKI04044-DS Rev.1.3 SANKEN ELECTRIC CO.,LTD. 2 May. 22, 2014 Thermal Characteristics Unless otherwise specified, T A = 25 °C Parameter Symbol Test Conditions Min. Typ. Max. Unit Thermal Resistance (Junction to Case) RθJC − − 1.4 °C/W Thermal Resistance (Junction to Ambient) RθJA − − 62.5 °C/W Electrical Characteristics Unless otherwise specified, T A = 25 °C Parameter Symbol Test Conditions Min. Typ. Max. Unit Drain to Source Breakdown Voltage V(BR)DSS ID = 100 μA, VGS = 0 V 40 − − V Drain to Source Leakage Current IDSS VDS = 40 V, VGS = 0 V − − 100 µA Gate to Source Leakage Current IGSS VGS = ± 20 V − − ± 100 nA Gate Threshold Voltage VGS(th) VDS = VGS, ID = 650 µA 1.0 2.0 2.5 V Static Drain to Source On-Resistance RDS(ON) ID = 42.8 A, VGS = 10 V − 4.1 5.2 mΩ ID = 21.4 A, VGS = 4.5 V − 5.4 7.0 mΩ Gate Resistance RG f = 1 MHz − 1.5 − Ω Input Capacitance Ciss VDS = 25 V VGS = 0 V f = 1 MHz − 2410 − pF Output Capacitance Coss − 395 − Reverse Transfer Capacitance Crss − 190 − Total Gate Charge (VGS = 10 V) Qg1 VDS = 20 V ID = 42.8 A − 35.0 − nC Total Gate Charge (VGS = 4.5 V) Qg2 − 16.0 − Gate to Source Charge Qgs − 5.6 − Gate to Drain Charge Qgd − 6.0 − Turn-On Delay Time td(on) VDD = 20 V ID = 42.8 A VGS = 10 V, RG = 4.7 Ω Refer to Figure 2 − 4.1 − ns Rise Time tr − 5.6 − Turn-Off Delay Time td(off) − 19.7 − Fall Time tf − 11.9 − Source to Drain Diode Forward Voltage VSD IS = 42.8 A, VGS = 0 V − 0.9 1.5 V Source to Drain Diode Reverse Recovery Time trr IF = 42.8 A di/dt = 100 A/µs Refer to Figure 3 − 32.9 − ns Source to Drain Diode Reverse Recovery Charge Q rr − 30.3 − nC |
Similar Part No. - SKI04044_14 |
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Similar Description - SKI04044_14 |
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