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BF1101WR Datasheet(PDF) 6 Page - NXP Semiconductors |
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BF1101WR Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 15 page 1999 May 14 6 NXP Semiconductors Product specification N-channel dual-gate MOS-FETs BF1101; BF1101R; BF1101WR Fig.9 Drain current as a function of gate 1 current; typical values. VDS =5 V. VG2-S =4 V. Tj =25 C. handbook, halfpage 0 20 8 12 16 4 0 10 MGS303 20 30 40 50 ID (mA) IG1 (μA) Fig.10 Drain current as a function of gate 1 supply voltage (= VGG); typical values. VDS =5 V; VG2-S =4V; Tj =25 C. RG1 =120 k (connected to VGG); see Fig.21. handbook, halfpage 0 15 10 5 0 1 MGS304 23 5 4 ID (mA) VGG (V) Fig.11 Drain current as a function of gate 1 (= VGG) and drain supply voltage; typical values. VG2-S =4 V; Tj =25 C. RG1 connected to VGG; see Fig.21. handbook, halfpage 0 20 8 12 16 4 0 2 468 ID (mA) VGG = VDS (V) RG1 = 47 kΩ 68 kΩ 82 k Ω 100 k Ω 120 k Ω 150 k Ω 180 k Ω 220 k Ω MGS305 VDS =5 V; Tj =25 C. RG1 =120 k (connected to VGG); see Fig.21. Fig.12 Drain current as a function of gate 2 voltage; typical values. handbook, halfpage 0 8 12 16 4 0 2 MGS306 46 ID (mA) VG2-S (V) 4.5 V 4 V 3.5 V 3 V VGG = 5 V |
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