K9K1G08U0M-YIB0 datasheet(9/37 Pages) SAMSUNG

Part #	K9K1G08U0M-YIB0

Description	128M x 8 Bit NAND Flash Memory

Download	37 Pages

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Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

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9 / 37 page

K9K1G08U0M-YCB0, K9K1G08U0M-YIB0

FLASH MEMORY

9

AC Characteristics for Operation

NOTE :

1. The time to Ready depends on the value of the pull-up resistor tied R/ B pin.

2. To break the sequential read cycle, CE must be held high for longer time than tCEH.

3. If reset command(FFh) is written at Ready state, the device goes into Busy for maximum 5us.

Parameter

Symbol

Min

Max

Unit

Data Transfer from Cell to Register

tR

-

12

µs

ALE to RE Delay( ID read )

tAR1

10

-

ns

ALE to RE Delay(Read cycle)

tAR2

50

-

ns

CLE to RE Delay

tCLR

50

-

ns

Ready to RE Low

tRR

20

-

ns

RE Pulse Width

tRP

30

-

ns

WE High to Busy

tWB

-

100

ns

Read Cycle Time

tRC

50

-

ns

RE Access Time

tREA

-

35

ns

RE High to Output Hi-Z

tRHZ

15

30

ns

CE High to Output Hi-Z

tCHZ

-

20

ns

RE High Hold Time

tREH

15

-

ns

Output Hi-Z to RE Low

tIR

0

-

ns

Last RE High to Busy(at sequential read)

tRB

-

100

ns

CE High to Ready(in case of interception by CE at read)

tCRY

-

50 +tr(R/B)(1)

ns

CE Access Time

tCEA

-

45

ns

CE High Hold Time(at the last serial read)(2)

tCEH

100

-

ns

WE High to RE Low

tWHR

60

-

ns

Device Resetting Time(Read/Program/Erase)

tRST

-

5/10/500 (3)

µs

AC Timing Characteristics for Command / Address / Data Input

NOTE : 1. If tCS is set less than 10ns, tWP must be minimum 35ns, otherwise, tWP may be minimum 25ns.

Parameter

Symbol

Min

Max

Unit

CLE setup Time

tCLS

0

-

ns

CLE Hold Time

tCLH

10

-

ns

CE setup Time

tCS

0

-

ns

CE Hold Time

tCH

10

-

ns

WE Pulse Width

tWP

25(1)

-

ns

ALE setup Time

tALS

0

-

ns

ALE Hold Time

tALH

10

-

ns

Data setup Time

tDS

20

-

ns

Data Hold Time

tDH

10

-

ns

Write Cycle Time

tWC

50

-

ns

WE High Hold Time

tWH

15

-

ns

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