HY62CT08081E-DGI datasheet(4/12 Pages) HYNIX

Part #	HY62CT08081E-DGI

Description	32Kx8bit CMOS SRAM

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Manufacturer	HYNIX [Hynix Semiconductor]

Direct Link	http://www.skhynix.com/kor/main.do

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HY62CT08081E Series

Rev 04 / Apr. 2001

3

TRUTH TABLE

/CS

/WE

/OE

Mode

I/O Operation

H

X

Standby

High-Z

L

H

Output Disabled

High-Z

L

H

L

Read

Data Out

L

X

Write

Data In

Note

1. H=VIH, L=VIL, X=Don't Care

DC CHARACTERISTICS

Vcc = 5V

±10%, TA = 0°C to 70°C (Normal) / -25°C to 85°C (Extended) / -40°C to 85°C (Industrial),

unless otherwise specified.

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Unit

ILI

Input Leakage Current

Vss < VIN < Vcc

-1

-

1

uA

ILO

Output Leakage Current

Vss < VOUT < Vcc, /CS = VIH or

/

OE = VIH or /WE = VIL

-1

-

1

uA

Icc

Operating Power Supply

Current

/CS = VIL,

VIN = VIH or VIL, II/O = 0mA

-

10

mA

ICC1

Average Operating Current

/CS = VIL, VIN = VIH or VIL,

Min. Duty Cycle = 100%, II/O = 0mA

-

50

mA

ISB

TTL Standby Current

(TTL Inputs)

/CS= VIH,

VIN = VIH or VIL

-

1

mA

ISB1

CMOS Standby Current

/CS > Vcc - 0.2V,

(CMOS Inputs)

VIN > Vcc - 0.2V or

0~70

°C

-

10

uA

VIN < Vss + 0.2V

-25~85

°C or

-40~85

°C

-

20

uA

VOL

Output Low Voltage

IOL = 2.1mA

-

0.4

V

VOH

Output High Voltage

IOH = -1.0mA

2.4

-

V

Note : Typical values are at Vcc =5.0V, TA = 25

°C

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