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AP2306AGEN-HF Datasheet(PDF) 1 Page - Advanced Power Electronics Corp. |
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AP2306AGEN-HF Datasheet(HTML) 1 Page - Advanced Power Electronics Corp. |
1 / 5 page AP2306AGEN-HF Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Capable of 2.5V Gate Drive BVDSS 30V ▼ Small Outline Package RDS(ON) 50mΩ ▼ Surface Mount Device ID 4.1A ▼ RoHS Compliant & Halogen-Free Description Absolute Maximum Ratings@Tj=25 oC(unless otherwise specified) Symbol Units VDS V VGS V ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TA=25℃ W TSTG ℃ TJ ℃ Symbol Value Unit Rthj-a Maximum Thermal Resistance, Junction-ambient 3 90 ℃ /W Data and specifications subject to change without notice 201411142 Halogen-Free Product Parameter Rating Drain-Source Voltage 30 Gate-Source Voltage +6 Drain Current 3, V GS @ 4.5V 4.1 Operating Junction Temperature Range -55 to 150 Drain Current 3, V GS @ 4.5V 3.3 Pulsed Drain Current 1 16 Storage Temperature Range Total Power Dissipation 1.38 -55 to 150 Thermal Data Parameter 1 D G S SOT-23 Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost- effectiveness device. The SOT-23 package is widely used for commercial-industrial applications. G D S . |
Similar Part No. - AP2306AGEN-HF_16 |
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Similar Description - AP2306AGEN-HF_16 |
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