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TLE6280GP Datasheet(PDF) 9 Page - Infineon Technologies AG

Part No. TLE6280GP
Description  3-Phase Bridge Driver IC
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

TLE6280GP Datasheet(HTML) 9 Page - Infineon Technologies AG

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Datasheet TLE6280GP
The power dissipation within the driver IC is strongly dependent upon the use of the driver
and the external components. Nevertheless, a rough estimation of the worst case power dis-
sipation is possible.
Worst case calculation is:
PD = (Qgate*n*const* fPWM + IVS(open)) * VVs - PRGate
With:
PD
= Power dissipation in the driver IC
fPWM
= Switching frequency
Qgate
= Total gate charge of used MOSFET at 10V VGS
n
= number of switched Mosfets
const
= constant considering some leakage current in the driver and the power dissipa-
tion caused by the charge pump (nominally = 2)
IVS(open)
= Current consumption of driver without connected Mosfets during switching
VVS
= Voltage at Vs
PRGate
= Power dissipation in the external gate resistors
This value can be reduced dramatically by the use of external gate resistors.
Recommended start up procedure
To assure the driver to be active and functional, a special initialization procedure is required
whenever the gate drive is enabled (VMFP is changed from LO to HI). Every time the driver is
enabled, after 10
µs or later, positive-going transition signals at all ILx pins are required in or-
der to ensure proper start-up of the output driver. This procedure assures a proper wake up
the device and allowes to fill the bootstrap capacitors. Not filling the bootstrap capacitors
might lead to low Gate-Source voltages mainly in highside and can cause a short circuit de-
tection when the highside switches are activated. Not changing the ILx input signal after
enabling the device may cause the lowside outputs to stay in off conditions.
9
2004-03-31


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