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TLE6280GP Datasheet(PDF) 8 Page - Infineon Technologies AG

Part No. TLE6280GP
Description  3-Phase Bridge Driver IC
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

TLE6280GP Datasheet(HTML) 8 Page - Infineon Technologies AG

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Datasheet TLE6280GP
As soon as the bootstrap voltage recovers, the output stage condition will be aligned to the
input patterns by the next changing input signal at the corresponding input pin.
Diagnosis
The ERR pin is an open collector output and has to be pulled up with external pull-up resis-
tors to 5V. In normal conditions the ERR signal is high. In case of an error the ERR pin is
pulled down. There are 3 different causes for an error signal:
1) Short circuit of an external Mosfet – all external Mosfets are switched off. The driver has
to be reset to start again.
2) Undervoltage warning: at least one of the external capacitors connected to Bxx pins has
a voltage below the warning level.
3) Over-temperature warning: The device works normally but is out of the maximum ratings.
Immediate actions have to be taken to reduce the thermal load. The error flag will be re-
moved when the driver reached temperatures below the over temperature warning level.
OR
ERR
Iscp (VMFP)
3.3µA
0.3µA
10pF
Temperature
Sensor
I undervoltage
τ approx. 1µs
Fig. 5: Block diagram of ERR functionality
dI/dt control
In all high current PWM applications, transient overvoltages and electro-magnetic emmisions
are critical items. The dI/dt regulation of the TLE6280GP helps to reduce transient overvolt-
age as well as electro-magnetic emissions.
Each real bridge configuration has stray inductance in each half-bridge. When the Mosfets in
the bridge are switching and load current is flowing, the stray inductance together with the
dI/dt in the halfbridge causies transient overvoltages. These transient overvoltages can be
feed to the DIDT pin of the gate driver by a high pass filter. Voltages exceeding 2 to 5V or –2
to –5V at this pin will strongly reduce the gate current of the actually switched Mosfet, result-
ing in an increased switching time in the Miller plateau of the Mosfet, and reducing the
switching speed exactly and only in the critical area of the switching process. Through this
regulation over-voltages are reduced and a smoother dI/dt in the bridge is obtained.
For more detailed information please refer to application note.
Estimation of power dissipation within the driver IC
8
2004-03-31


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