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TLE4917 Datasheet(PDF) 3 Page - Infineon Technologies AG |
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TLE4917 Datasheet(HTML) 3 Page - Infineon Technologies AG |
3 / 13 page Data Sheet 3 AEB02800_C Chopped Am plifier Hall P robe Latch Ac tive E rror Com pensation Osc illator & Sequencer Threshold Generator B ias and Com pensation C ircuits V S 1 2, 4, 5 GND Comp arator w ith Hysteresis PRG 6 3 Q Decision Logic Figure 2 Block Diagram Circuit Description The Low Power Hall IC Switch comprises a Hall probe, bias generator, compensation circuits, oscillator, output latch and an n-channel open drain output transistor. The bias generator provides currents for the Hall probe and the active circuits. Compensation circuits stabilize the temperature behavior and reduce technology variations. The Active Error Compensation rejects offsets in signal stages and the influence of mechanical stress to the Hall probe caused by molding and soldering processes and other thermal stresses in the package. This chopper technique together with the threshold generator and the comparator ensures high accurate magnetic switching points. Very low power consumption is achieved with a timing scheme controlled by an oscillator and a sequencer. This circuitry activates the sensor for 50 µs (typical operating time) sets the output state after sequential questioning of the switch points and latches it with the beginning of the following standby phase (typ. 130 ms). In the standby phase the average current is reduced to typical 3.5 µA. Because of the long standby time compared to the operating time the overall averaged current is only slightly higher than the standby current. By connecting the programming pin to GND (normal to V S) the Output State can be inverted to further reduce the current consumption in applications where a high magnetic field is the |
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Similar Description - TLE4917 |
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