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FSB43004A Datasheet(PDF) 6 Page - Fairchild Semiconductor |
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FSB43004A Datasheet(HTML) 6 Page - Fairchild Semiconductor |
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6 / 12 page  ©2015 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com FSB43004A Rev. 1.1 Electrical Characteristics (TJ = 25°C, unless otherwise specified.) Inverter Part 2nd Notes: 1. BVDSS is the absolute maximum voltage rating between drain and source terminal of each MOSFET. VPN should be sufficiently less than this value considering the effect of the stray inductance so that VDS should not exceed BVDSS in any case. 2. tON and tOFF include the propagation delay time of the internal drive IC. tC(ON) and tC(OFF) are the switching time of MOSFET itself under the given gate driving condition inter- nally. For the detailed information, please see Figure 4. Figure 4. Switching Time Definition Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VIN=0 V, ID=250 A (2nd Notes 1) 40 - - V RDS(ON) Drain-Source ON Resistance VCC = VBS = 15 V, VIN = 5 V, ID = 60 A - 2.1 3.0 m VSD Source-Drain Diode Forward Voltage VCC = VBS = 15 V, VIN = 0 V, ISD = 60 A - 0.8 - V tON Switching Characteristic VPN = 20 V, VCC = VBS = 15 V, ID = 60 A, VIN = 0 V 5 V, High side, Inductive Load (2nd Notes 2) - 1750 - ns tC(ON) - 900 - ns tOFF - 2600 - ns tC(OFF) - 800 - ns trr -60 - ns Irr -3 - A tON VPN = 20 V, VCC = VBS = 15 V, ID = 60 A, VIN = 0 V 5 V, Low side, Inductive Load (2nd Notes 2) - 1900 - ns tC(ON) - 850 - ns tOFF - 2600 - ns tC(OFF) - 850 - ns trr -60 - ns Irr -6 - A IDSS Drain-Source Leakage Current VDS = VDSS -- 250 A VDS ID VIN tON tC(ON) 10% ID 10% VDS 90% ID 100% ID trr 100% ID VDS ID VIN tOFF tC(OFF) 10% VDS 10% ID (a) turn-on (b) turn-off |
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