PMEG4005AESF datasheet(6/16 Pages) NXP

Part #	PMEG4005AESF

Description	40 V, 0.5 A low VF MEGA Schottky barrier rectifier

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NXP Semiconductors

PMEG4005AESF

40 V, 0.5 A low VF MEGA Schottky barrier rectifier

PMEG4005AESF

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Product data sheet

6 February 2015

6 / 16

10. Characteristics

Table 7.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V(BR)R

reverse breakdown

voltage

IR = 100 µA; tp = 300 µs; δ = 0.02;

Tj = 25 °C

40

-

V

IF = 0.1 mA; tp ≤ 300 µs; δ ≤ 0.02;

Tj = 25 °C

-

120

185

mV

IF = 1 mA; tp ≤ 300 µs; δ ≤ 0.02;

Tj = 25 °C

-

180

245

mV

IF = 10 mA; tp ≤ 300 µs; δ ≤ 0.02;

Tj = 25 °C

-

250

320

mV

IF = 100 mA; tp ≤ 300 µs; δ ≤ 0.02;

Tj = 25 °C

-

370

440

mV

IF = 200 mA; tp ≤ 300 µs; δ ≤ 0.02;

Tj = 25 °C

-

450

525

mV

IF = 300 mA; tp ≤ 300 µs; δ ≤ 0.02;

Tj = 25 °C

-

530

630

mV

IF = 400 mA; tp ≤ 300 µs; δ ≤ 0.02;

Tj = 25 °C

-

600

730

mV

VF

forward voltage

IF = 500 mA; tp ≤ 300 µs; δ ≤ 0.02;

Tj = 25 °C

-

675

820

mV

VR = 10 V; Tj = 25 °C; pulsed

-

3

20

µA

IR

reverse current

VR = 40 V; Tj = 25 °C; pulsed

-

13

80

µA

VR = 1 V; f = 1 MHz; Tj = 25 °C

-

18

-

pF

Cd

diode capacitance

VR = 10 V; f = 1 MHz; Tj = 25 °C

-

7

-

pF

trr

reverse recovery time

IF = 500 mA; IR = 500 mA;

IR(meas) = 100 mA; Tj = 25 °C

-

1.25

-

ns

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