PHPT61006PY datasheet(6/16 Pages) NXP

Part #	PHPT61006PY

Description	100 V, 6 A PNP high power bipolar transistor

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NXP Semiconductors

PHPT61006PY

100 V, 6 A PNP high power bipolar transistor

PHPT61006PY

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Product data sheet

21 January 2015

6 / 16

10. Characteristics

Table 7.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VCB = -80 V; IE = 0 A; Tamb = 25 °C

-

-100

nA

ICBO

collector-base cut-off

current

VCB = -80 V; IE = 0 A; Tj = 150 °C

-

-50

µA

ICES

collector-emitter cut-off

current

VCE = -80 V; VBE = 0 V; Tamb = 25 °C

-

-100

nA

IEBO

emitter-base cut-off

current

VEB = -8 V; IC = 0 A; Tamb = 25 °C

-

-100

nA

VCE = -2 V; IC = -500 mA; Tamb = 25 °C

170

305

-

VCE = -2 V; IC = -1 A; tp ≤ 300 µs;

δ ≤ 0.02; Tamb = 25 °C; pulsed

160

275

-

VCE = -2 V; IC = -3 A; tp ≤ 300 µs;

δ ≤ 0.02; Tamb = 25 °C; pulsed

45

90

-

hFE

DC current gain

VCE = -2 V; IC = -6 A; pulsed;

tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C

10

20

-

IC = -1 A; IB = -50 mA; tp ≤ 300 µs;

δ ≤ 0.02; Tamb = 25 °C

-

-75

-130

mV

IC = -3 A; IB = -300 mA; pulsed;

tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C

-

-150

-240

mV

VCEsat

collector-emitter

saturation voltage

IC = -6 A; IB = -600 mA; pulsed;

tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C

-

-900

-1600 mV

RCEsat

collector-emitter

saturation resistance

IC = -6 A; IB = -600 mA; tp ≤ 300 µs;

δ ≤ 0.02; Tamb = 25 °C; pulsed

-

85

270

mΩ

IC = -1 A; IB = -50 mA; pulsed;

tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C

-

-0.8

-0.95

V

IC = -3 A; IB = -300 mA; pulsed;

tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C

-

-0.95

-1.1

V

VBEsat

base-emitter saturation

voltage

IC = -6 A; IB = -600 mA; pulsed;

tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C

-

-1.1

-1.25

V

VBEon

base-emitter turn-on

voltage

VCE = -2 V; IC = -500 mA; Tamb = 25 °C

-

-0.7

-0.8

V

td

delay time

-

15

-

ns

tr

rise time

-

220

-

ns

ton

turn-on time

-

235

-

ns

ts

storage time

-

160

-

ns

tf

fall time

-

185

-

ns

toff

turn-off time

VCC = -12.5 V; IC = -3 A;

IBon = -150 mA; IBoff = 150 mA;

Tamb = 25 °C

-

345

-

ns

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