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PHPT61006PY Datasheet(PDF) 6 Page - NXP Semiconductors |
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PHPT61006PY Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 16 page NXP Semiconductors PHPT61006PY 100 V, 6 A PNP high power bipolar transistor PHPT61006PY All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved Product data sheet 21 January 2015 6 / 16 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit VCB = -80 V; IE = 0 A; Tamb = 25 °C - - -100 nA ICBO collector-base cut-off current VCB = -80 V; IE = 0 A; Tj = 150 °C - - -50 µA ICES collector-emitter cut-off current VCE = -80 V; VBE = 0 V; Tamb = 25 °C - - -100 nA IEBO emitter-base cut-off current VEB = -8 V; IC = 0 A; Tamb = 25 °C - - -100 nA VCE = -2 V; IC = -500 mA; Tamb = 25 °C 170 305 - VCE = -2 V; IC = -1 A; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C; pulsed 160 275 - VCE = -2 V; IC = -3 A; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C; pulsed 45 90 - hFE DC current gain VCE = -2 V; IC = -6 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 10 20 - IC = -1 A; IB = -50 mA; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C - -75 -130 mV IC = -3 A; IB = -300 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C - -150 -240 mV VCEsat collector-emitter saturation voltage IC = -6 A; IB = -600 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C - -900 -1600 mV RCEsat collector-emitter saturation resistance IC = -6 A; IB = -600 mA; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C; pulsed - 85 270 mΩ IC = -1 A; IB = -50 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C - -0.8 -0.95 V IC = -3 A; IB = -300 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C - -0.95 -1.1 V VBEsat base-emitter saturation voltage IC = -6 A; IB = -600 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C - -1.1 -1.25 V VBEon base-emitter turn-on voltage VCE = -2 V; IC = -500 mA; Tamb = 25 °C - -0.7 -0.8 V td delay time - 15 - ns tr rise time - 220 - ns ton turn-on time - 235 - ns ts storage time - 160 - ns tf fall time - 185 - ns toff turn-off time VCC = -12.5 V; IC = -3 A; IBon = -150 mA; IBoff = 150 mA; Tamb = 25 °C - 345 - ns |
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