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IRF3205L Datasheet(PDF) 2 Page - Kersemi Electronic Co., Ltd.

Part No. IRF3205L
Description  Advanced Process Technology
Download  10 Pages
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Maker  KERSEMI [Kersemi Electronic Co., Ltd.]
Homepage  http://www.kersemi.com
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IRF3205L Datasheet(HTML) 2 Page - Kersemi Electronic Co., Ltd.

 
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IRF3205L
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
–––
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

–––
–––
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.3
V
TJ = 25°C, IS = 62A, VGS = 0V
„
trr
Reverse Recovery Time
–––
69
104
ns
TJ = 25°C, IF = 62A
Qrr
Reverse Recovery Charge
–––
143
215
nC
di/dt = 100A/µs
„
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
110
390
A
‚ Starting TJ = 25°C, L = 138µH
RG = 25Ω, IAS = 62A. (See Figure 12)
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Notes:
ƒ ISD ≤ 62A, di/dt ≤ 207A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
„ Pulse width ≤ 400µs; duty cycle ≤ 2%.
… Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
55
–––
–––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.057 –––
V/°C
Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance
–––
–––
8.0
m
VGS = 10V, ID = 62A
„
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
VDS = VGS, ID = 250µA
gfs
Forward Transconductance
44
–––
–––
S
VDS = 25V, ID = 62A
„
–––
–––
25
µA
VDS = 55V, VGS = 0V
–––
–––
250
VDS = 44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage
–––
–––
100
VGS = 20V
Gate-to-Source Reverse Leakage
–––
–––
-100
nA
VGS = -20V
Qg
Total Gate Charge
–––
–––
146
ID = 62A
Qgs
Gate-to-Source Charge
–––
–––
35
nC
VDS = 44V
Qgd
Gate-to-Drain ("Miller") Charge
–––
–––
54
VGS = 10V, See Fig. 6 and 13
td(on)
Turn-On Delay Time
–––
14
–––
VDD = 28V
tr
Rise Time
–––
101
–––
ID = 62A
td(off)
Turn-Off Delay Time
–––
50
–––
RG = 4.5Ω
tf
Fall Time
–––
65
–––
VGS = 10V, See Fig. 10
„
Between lead,
–––
–––
6mm (0.25in.)
from package
and center of die contact
Ciss
Input Capacitance
–––
3247 –––
VGS = 0V
Coss
Output Capacitance
–––
781
–––
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
211
–––
pF
ƒ = 1.0MHz, See Fig. 5
EAS
Single Pulse Avalanche Energy
‚
––– 1050
† 264‡ mJ
IAS = 62A, L = 138µH
nH
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
LD
Internal Drain Inductance
LS
Internal Source Inductance
–––
–––
S
D
G
IGSS
ns
4.5
7.5
IDSS
Drain-to-Source Leakage Current
† This is a typical value at device destruction and represents
operation outside rated limits.
‡This is a calculated value limited to TJ = 175°C.
2014-8-28
2
www.kersemi.com


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