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SPW47N60C2 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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SPW47N60C2 Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 11 page 2002-10-07 Page 1 SPW47N60C2 Final data Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best R DS(on) in TO 247 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved noise immunity Product Summary VDS 600 V RDS(on) 0.07 Ω ID 47 A P-TO247 Type Package Ordering Code SPW47N60C2 P-TO247 Q67040-S4323 Marking 47N60C2 Maximum Ratings, at TC = 25°C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current TC = 25 °C TC = 100 °C ID 47 30 A Pulsed drain current, tp limited by Tjmax ID puls 94 Avalanche energy, single pulse ID=10A, VDD=50V EAS 1800 mJ Avalanche energy, repetitive tAR limited by Tjmax1) ID=20A, VDD=50V EAR 1 Avalanche current, repetitive tAR limited by Tjmax IAR 20 A Reverse diode dv/dt IS=47A, VDS < VDD, di/dt=100A/µs, Tjmax=150°C dv/dt 6 V/ns Gate source voltage VGS ±20 V Power dissipation, TC = 25°C Ptot 415 W Operating and storage temperature Tj , Tstg -55... +150 °C |
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