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SPW17N80C3 Datasheet(PDF) 2 Page - Infineon Technologies AG

Part No. SPW17N80C3
Description  Cool MOS™ Power Transistor
Download  11 Pages
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Maker  INFINEON [Infineon Technologies AG]
Homepage  http://www.infineon.com
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SPW17N80C3 Datasheet(HTML) 2 Page - Infineon Technologies AG

 
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2004-03-03
Rev. 2.1
Page 2
SPW17N80C3
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain Source voltage slope
VDS = 640 V, ID = 17 A, Tj = 125 °C
dv/dt
50
V/ns
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Thermal resistance, junction - case
RthJC
-
-
0.6
K/W
Thermal resistance, junction - ambient, leaded
RthJA
-
-
62
Soldering temperature,
1.6 mm (0.063 in.) from case for 10s
Tsold
-
-
260
°C
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA
800
-
-
V
Drain-Source avalanche
breakdown voltage
V(BR)DS VGS=0V, ID=17A
-
870
-
Gate threshold voltage
VGS(th)
ID=1000µΑ, VGS=VDS 2.1
3
3.9
Zero gate voltage drain current
IDSS
VDS=800V, VGS=0V,
Tj=25°C,
Tj=150°C
-
-
0.5
-
25
250
µA
Gate-source leakage current
IGSS
VGS=20V, VDS=0V
-
-
100
nA
Drain-source on-state resistance RDS(on) VGS=10V, ID=11A,
Tj=25°C
Tj=150°C
-
-
0.25
0.78
0.29
-
Gate input resistance
RG
f=1MHz, open Drain
-
0.7
-


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