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SPP100N08S2-07 Datasheet(PDF) 3 Page - Infineon Technologies AG

Part # SPP100N08S2-07
Description  OptiMOS Power-Transistor
Download  8 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

SPP100N08S2-07 Datasheet(HTML) 3 Page - Infineon Technologies AG

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2003-05-09
Page 3
SPP100N08S2-07
SPB100N08S2-07
Electrical Characteristics
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Transconductance
gfs
VDS≥2*ID*RDS(on)max,
ID=100A
56
112
-
S
Input capacitance
Ciss
VGS=0V, VDS =25V,
f=1MHz
-
4530
6020 pF
Output capacitance
Coss
-
1080
1440
Reverse transfer capacitance
Crss
-
450
680
Turn-on delay time
td(on)
VDD=40V, VGS =10V,
ID=100A,
RG=2.2Ω
-
25
38
ns
Rise time
tr
-
36
54
Turn-off delay time
td(off)
-
68
100
Fall time
tf
-
36
55
Gate Charge Characteristics
Gate to source charge
Qgs
VDD=60V, ID=100A
-
25
33
nC
Gate to drain charge
Qgd
-
82
120
Gate charge total
Qg
VDD=60V, ID=100A,
VGS=0 to 10V
-
153
200
Gate plateau voltage
V(plateau) VDD=60V, ID=100A
-
5.5
-
V
Reverse Diode
Inverse diode continuous
forward current
IS
TC=25°C
-
-
100
A
Inv. diode direct current, pulsed
ISM
-
-
400
Inverse diode forward voltage
VSD
VGS=0V, IF=80A
-
0.9
1.3
V
Reverse recovery time
trr
VR=40V, IF=lS,
diF/dt=100A/µs
-
90
110
ns
Reverse recovery charge
Qrr
-
290
360
nC


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