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SPB80P06P Datasheet(PDF) 8 Page - Infineon Technologies AG |
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SPB80P06P Datasheet(HTML) 8 Page - Infineon Technologies AG |
8 / 9 page 1999-11-22 Page 8 SPP80P06P SPB80P06P Preliminary data Avalanche energy EAS = f (Tj) para.: ID = -80 A , VDD = -25 V, RGS = 25 W 25 45 65 85 105 125 145 °C 185 Tj 0 100 200 300 400 500 600 700 mJ 850 Typ. gate charge VGS = f (QGate) parameter: ID = -80 A pulsed 0 20 40 60 80 100 120 140 nC 180 QGate 0 -2 -4 -6 -8 -10 -12 V -16 SPP80P06P DS max V 0,8 DS max V 0,2 Drain-source breakdown voltage V(BR)DSS = f (Tj) -60 -20 20 60 100 140 °C 200 Tj -54 -56 -58 -60 -62 -64 -66 -68 V -72 SPP80P06P |
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