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SPP80P06P Datasheet(PDF) 7 Page - Infineon Technologies AG

Part # SPP80P06P
Description  SIPMOS Power-Transistor
Download  9 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

SPP80P06P Datasheet(HTML) 7 Page - Infineon Technologies AG

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1999-11-22
Page 7
SPP80P06P
SPB80P06P
Preliminary data
Drain-source on-state resistance
RDS(on) = f (Tj)
parameter :
ID = -64 A, VGS = -10 V
-60
-20
20
60
100
140
°C
200
Tj
0.000
0.005
0.010
0.015
0.020
0.025
0.030
0.035
0.040
0.045
0.050
0.055
0.060
W
0.070
SPP80P06P
typ
98%
Gate threshold voltage
VGS(th) = f (Tj)
parameter:
VGS = VDS, ID = -5.5 mA
-60
-20
20
60
100
140
°C
200
Tj
0.0
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
-3.5
-4.0
V
-5.0
2%
-60
-20
20
60
100
140
°C
200
Tj
0.0
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
-3.5
-4.0
V
-5.0
typ
-60
-20
20
60
100
140
°C
200
Tj
0.0
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
-3.5
-4.0
V
-5.0
98%
-60
-20
20
60
100
140
°C
200
Tj
0.0
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
-3.5
-4.0
V
-5.0
Typ. capacitances
C = f (VDS)
parameter:
VGS=0V, f=1 MHz
0
-5
-10
-15
V
-25
VDS
2
10
3
10
4
10
5
10
pF
Ciss
Coss
Crss
Forward characteristics of reverse diode
IF = f (VSD)
parameter:
Tj , tp = 80 µs
0.0
-0.4
-0.8
-1.2
-1.6
-2.0
-2.4 V
-3.0
VSD
0
10
1
10
2
10
3
10
A
SPP80P06P
T
j = 25 °C typ
T
j = 25 °C (98%)
T
j = 175 °C typ
T
j = 175 °C (98%)


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