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SPB80N06S2L-09 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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SPB80N06S2L-09 Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 8 page 2003-05-09 Page 1 SPP80N06S2L-09 SPB80N06S2L-09 OptiMOS® Power-Transistor Product Summary VDS 55 V RDS(on) 8.5 m Ω ID 80 A Feature • N-Channel • Enhancement mode • Logic Level • 175°C operating temperature • Avalanche rated • dv/dt rated P- TO263 -3-2 P- TO220 -3-1 Marking 2N06L09 2N06L09 Type Package Ordering Code SPP80N06S2L-09 P- TO220 -3-1 Q67060-S6031 SPB80N06S2L-09 P- TO263 -3-2 Q67060-S6032 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current 1) TC=25°C ID 80 73 A Pulsed drain current TC=25°C ID puls 320 Avalanche energy, single pulse ID=80 A , VDD=25V, RGS=25Ω EAS 370 mJ Repetitive avalanche energy, limited by Tjmax2) EAR 19 Reverse diode dv/dt IS=80A, VDS=44V, di/dt=200A/µs, Tjmax=175°C dv/dt 6 kV/µs Gate source voltage VGS ±20 V Power dissipation TC=25°C Ptot 190 W Operating and storage temperature Tj , Tstg -55... +175 °C IEC climatic category; DIN IEC 68-1 55/175/56 |
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