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SPP20N65C3 Datasheet(PDF) 3 Page - Infineon Technologies AG

Part No. SPP20N65C3
Description  Cool MOS™ Power Transistor
Download  14 Pages
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Maker  INFINEON [Infineon Technologies AG]
Homepage  http://www.infineon.com
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SPP20N65C3 Datasheet(HTML) 3 Page - Infineon Technologies AG

 
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 3 / 14 page
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2003-0
8-15
Page 3
SPP20N65C3, SPA20N65C3
SPI20N65C3
Electrical Characteristics
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Transconductance
gfs
VDS≥2*ID*RDS(on)max,
ID=13.1A
-
17.5
-
S
Input capacitance
Ciss
VGS=0V, VDS=25V,
f
=1MHz
-
2400
-
pF
Output capacitance
Coss
-
780
-
Reverse transfer capacitance
Crss
-
50
-
Effective output capacitance,6)
energy related
Co(er)
VGS=0V,
VDS=0V to 480V
-
83
-
Effective output capacitance,7)
time related
Co(tr)
-
160
-
Turn-on delay time
td(on)
VDD=380V, VGS=0/13V,
ID=20.7A,
RG=3.6Ω, Tj=125
-
10
-
ns
Rise time
tr
VDD=380V, VGS=0/13V,
ID=20.7A,
RG=3.6Ω
-
5
-
Turn-off delay time
td(off)
-
67
100
Fall time
tf
-
4.5
12
Gate Charge Characteristics
Gate to source charge
Qgs
VDD=480V, ID=20.7A
-
11
-
nC
Gate to drain charge
Qgd
-
33
-
Gate charge total
Qg
VDD=480V, ID=20.7A,
VGS=0 to 10V
-
87
114
Gate plateau voltage
V(plateau) VDD=480V, ID=20.7A
-
5.5
-
V
1Limited only by maximum temperature
2Repetitve avalanche causes additional power losses that can be calculated as P
AV=EAR*f.
3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
4Soldering temperature for TO-263: 220°C, reflow
5HTRB @ 1000h, 600V, Tjmax resp. accelerated HTRB @ 168h, 600V, Tj= 175°C
according to JEDEC A108, MIL-STD 750/1038-1040, 1042
6C
o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.
7C
o(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.


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