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SPP20N60S5 Datasheet(PDF) 2 Page - Infineon Technologies AG

Part No. SPP20N60S5
Description  Cool MOS™ Power Transistor
Download  11 Pages
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Maker  INFINEON [Infineon Technologies AG]
Homepage  http://www.infineon.com
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SPP20N60S5 Datasheet(HTML) 2 Page - Infineon Technologies AG

 
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2004-03-30
Rev. 2.1
Page 2
SPP20N60S5
SPB20N60S5
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain Source voltage slope
VDS = 480 V, ID = 20 A, Tj = 125 °C
dv/dt
20
V/ns
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Thermal resistance, junction - case
RthJC
-
-
0.6
K/W
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 2)
RthJA
-
-
-
35
62
-
Soldering temperature,
1.6 mm (0.063 in.) from case for 10s
Tsold
-
-
260
°C
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA
600
-
-
V
Drain-Source avalanche
breakdown voltage
V(BR)DS VGS=0V, ID=20A
-
700
-
Gate threshold voltage
VGS(th)
ID=1000µΑ, VGS=VDS 3.5
4.5
5.5
Zero gate voltage drain current
IDSS
VDS=600V, VGS=0V,
Tj=25°C,
Tj=150°C
-
-
0.5
-
5
250
µA
Gate-source leakage current
IGSS
VGS=20V, VDS=0V
-
-
100
nA
Drain-source on-state resistance RDS(on) VGS=10V, ID=13A,
Tj=25°C
Tj=150°C
-
-
0.16
0.43
0.19
-
Gate input resistance
RG
f
=1MHz, open Drain
-
12
-


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