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SPP20N60CFD Datasheet(PDF) 2 Page - Infineon Technologies AG

Part No. SPP20N60CFD
Description  Cool MOS™ Power Transistor
Download  12 Pages
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Maker  INFINEON [Infineon Technologies AG]
Homepage  http://www.infineon.com
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SPP20N60CFD Datasheet(HTML) 2 Page - Infineon Technologies AG

 
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2003-12-22
Page 2
SPP20N60CFD
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain Source voltage slope
VDS = 480 V, ID = 20.7 A, Tj = 125 °C
dv/dt
80
V/ns
Maximum diode commutation speed
VDS = 480 V, ID = 20.7 A, Tj = 125 °C
diF/dt
900
A/µs
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Thermal resistance, junction - case
RthJC
-
-
0.6
K/W
Thermal resistance, junction - ambient, leaded
RthJA
-
-
62
Soldering temperature,
1.6 mm (0.063 in.) from case for 10s
T
sold
-
-
260
°C
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Drain-source breakdown voltage
V(BR)DSS VGS=0V, ID=0.25mA
600
-
-
V
Drain-Source avalanche
breakdown voltage
V(BR)DS VGS=0V, ID=20A
-
700
-
Gate threshold voltage
VGS(th)
ID=1000µΑ, VGS=VDS
3
4
5
Zero gate voltage drain current
IDSS
VDS=600V, VGS=0V,
Tj=25°C,
Tj=150°C
-
-
2.1
1700
-
-
µA
Gate-source leakage current
IGSS
VGS=20V, VDS=0V
-
-
100
nA
Drain-source on-state resistance
RDS(on)
VGS=10V, ID=13.1A,
Tj=25°C
Tj=150°C
-
-
0.19
0.51
0.22
-
Gate input resistance
RG
f=1MHz, open Drain
-
0.54
-


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