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SPP20N60CFD Datasheet(PDF) 1 Page - Infineon Technologies AG

Part No. SPP20N60CFD
Description  Cool MOS™ Power Transistor
Download  12 Pages
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Maker  INFINEON [Infineon Technologies AG]
Homepage  http://www.infineon.com
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SPP20N60CFD Datasheet(HTML) 1 Page - Infineon Technologies AG

 
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2003-12-22
Page 1
SPP20N60CFD
Cool MOS™ Power Transistor
V
DS
@ T
jmax
650
V
RDS(on)
0.22
ID
20.7
A
Feature
• New revolutionary high voltage technology
• Worldwide best R
DS(on) in TO 220
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• High peak current capability
• Intrinsic fast-recovery body diode
• Extreme low reverse recovery charge
P-TO220-3-1
Type
Package
Ordering Code
SPP20N60CFD
P-TO220-3-1
Q67040-S4616
Marking
20N60CFD
Maximum Ratings
Parameter
Symbol
Value
Unit
Continuous drain current
T
C = 25 °C
TC = 100 °C
ID
20.7
13.1
A
Pulsed drain current, tp limited by Tjmax
ID puls
52
Avalanche energy, single pulse
I
D = 10 A, V DD = 50 V
EAS
690
mJ
Avalanche energy, repetitive t
AR
limited by T
jmax
1)
I
D = 20 A, V DD = 50 V
E
AR
1
Avalanche current, repetitive tARlimited by Tjmax
IAR
20
A
Reverse diode dv/dt
IS=20.7A, VDS=480V, Tj=125°C
dv/dt
40
V/ns
Gate source voltage
VGS
±20
V
Gate source voltage AC (f >1Hz)
VGS
±30
Power dissipation, TC = 25°C
Ptot
208
W
Operating and storage temperature
T
j
,
T
stg
-55... +150
°C


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