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SPP15P10P Datasheet(PDF) 3 Page - Infineon Technologies AG |
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SPP15P10P Datasheet(HTML) 3 Page - Infineon Technologies AG |
3 / 8 page 2002-07-26 Page 3 Preliminary data SPP15P10P Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Dynamic Characteristics Transconductance gfs |VDS|≥ 2*|ID|*RDS(on)max ID=-10.7A 4.7 9.3 - S Input capacitance Ciss VGS=0, VDS=-25V, f=1MHz - 944 1180 pF Output capacitance Coss - 226 283 Reverse transfer capacitance Crss - 91 114 Turn-on delay time td(on) VDD=-50V, VGS=-10V, ID=-15A, RG=6Ω - 8.9 13.4 ns Rise time tr - 30 45 Turn-off delay time td(off) - 35 53 Fall time tf - 22 33 Gate Charge Characteristics Gate to source charge Qgs VDD=-80V, ID=-15A - -4.5 -6.7 nC Gate to drain charge Qgd - -15.3 -23 Gate charge total Qg VDD=-80V, ID=-15A, VGS=0 to -10V - -33.4 -50 Gate plateau voltage V(plateau) VDD=-80V, ID=-15A - -5.7 - V Reverse Diode Inverse diode continuous forward current IS TA=25°C - - -15 A Inv. diode direct current, pulsed ISM - - -60 Inverse diode forward voltage VSD VGS=0, |IF| = |IS| - -0.94 -1.35 V Reverse recovery time trr VR=-50V, |IF| = |IS|, diF/dt=100A/µs - 100 150 ns Reverse recovery charge Qrr - 419 628 nC |
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