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SPA11N60C3 Datasheet(PDF) 1 Page - Infineon Technologies AG

Part No. SPA11N60C3
Description  Cool MOS™ Power Transistor
Download  14 Pages
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Maker  INFINEON [Infineon Technologies AG]
Homepage  http://www.infineon.com
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SPA11N60C3 Datasheet(HTML) 1 Page - Infineon Technologies AG

 
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2003-07-01
Page 1
SPP11N60C3, SPB11N60C3
SPI11N60C3, SPA11N60C3
Final data
Cool MOS™ Power Transistor
VDS @ Tjmax
650
V
RDS(on)
0.38
ID
11
A
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• High peak current capability
• Improved transconductance
• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
P-TO262-3-1
P-TO263-3-2
P-TO220-3-31
P-TO220-3-1
P-TO220-3-31
1
2
3
Marking
11N60C3
11N60C3
11N60C3
11N60C3
Type
Package
Ordering Code
SPP11N60C3
P-TO220-3-1
Q67040-S4395
SPB11N60C3
P-TO263-3-2
Q67040-S4396
SPI11N60C3
P-TO262-3-1
Q67042-S4403
SPA11N60C3
P-TO220-3-31 Q67040-S4408
Maximum Ratings
Parameter
Symbol
Value
Unit
SPA
Continuous drain current
TC = 25 °C
TC = 100 °C
ID
11
7
111)
71)
A
Pulsed drain current, tp limited by Tjmax
ID puls
33
33
A
Avalanche energy, single pulse
ID=5.5A, VDD=50V
EAS
340
340
mJ
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=11A, VDD=50V
EAR
0.6
0.6
Avalanche current, repetitive tAR limited by Tjmax
IAR
11
11
A
Gate source voltage static
VGS
±20
±20
V
Gate source voltage AC (f >1Hz)
VGS
±30
±30
Power dissipation, TC = 25°C
Ptot
125
33
W
SPP_B
SPP_B_I
Operating and storage temperature
Tj , Tstg
-55...+150
°C


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