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SPA11N60C3 Datasheet(PDF) 9 Page - Infineon Technologies AG

Part No. SPA11N60C3
Description  Cool MOS™ Power Transistor
Download  14 Pages
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Maker  INFINEON [Infineon Technologies AG]
Homepage  http://www.infineon.com
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SPA11N60C3 Datasheet(HTML) 9 Page - Infineon Technologies AG

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 9 / 14 page
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2003-07-01
Page 9
SPP11N60C3, SPB11N60C3
SPI11N60C3, SPA11N60C3
Final data
17 Typ. drain source voltage slope
dv/dt
= f(RG), inductive load, Tj = 125°C
par.: VDS=380V, VGS=0/+13V, ID=11A
0
10
20
30
40
50
70
RG
10
20
30
40
50
60
70
80
90
100
110
120
V/ns
140
dv/dt(off)
dv/dt(on)
18 Typ. switching losses
E = f (ID), inductive load, Tj=125°C
par.: VDS=380V, VGS=0/+13V, RG=6.8Ω
0
2
4
6
8
A
12
ID
0
0.005
0.01
0.015
0.02
0.025
0.03
mWs
0.04
Eon*
Eoff
*) Eon includes SPD06S60 diode
commutation losses
19 Typ. switching losses
E = f(RG), inductive load, Tj=125°C
par.: VDS=380V, VGS=0/+13V, ID=11A
0
10
20
30
40
50
70
RG
0
0.04
0.08
0.12
0.16
mWs
0.24
Eon*
Eoff
*) Eon includes SPD06S60 diode
commutation losses
20 Avalanche SOA
IAR = f (tAR)
par.: Tj ≤ 150 °C
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
4
µs
tAR
0
1
2
3
4
5
6
7
8
9
A
11
Tj(START)=125°C
Tj(START)=25°C


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