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SPA11N60C3 Datasheet(PDF) 8 Page - Infineon Technologies AG

Part No. SPA11N60C3
Description  Cool MOS™ Power Transistor
Download  14 Pages
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Maker  INFINEON [Infineon Technologies AG]
Homepage  http://www.infineon.com
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SPA11N60C3 Datasheet(HTML) 8 Page - Infineon Technologies AG

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2003-07-01
Page 8
SPP11N60C3, SPB11N60C3
SPI11N60C3, SPA11N60C3
Final data
13 Forward characteristics of body diode
IF = f (VSD)
parameter: Tj , tp = 10 µs
0
0.4
0.8
1.2
1.6
2
2.4
V
3
VSD
-1
10
0
10
1
10
2
10
A
SPP11N60C3
T
j = 25 °C typ
T
j = 25 °C (98%)
T
j = 150 °C typ
T
j = 150 °C (98%)
14 Typ. switching time
t = f (ID), inductive load, Tj=125°C
par.: VDS=380V, VGS=0/+13V, RG=6.8Ω
0
2
4
6
8
A
12
ID
0
5
10
15
20
25
30
35
40
45
50
55
60
ns
70
tr
td(off)
td(on)
tf
15 Typ. switching time
t = f (RG), inductive load, Tj=125°C
par.: VDS=380V, VGS=0/+13V, ID=11 A
0
10
20
30
40
50
70
RG
0
50
100
150
200
250
ns
350
td(off)
td(on)
tr
tf
16 Typ. drain current slope
di/dt
= f(RG), inductive load, Tj = 125°C
par.: VDS=380V, VGS=0/+13V, ID=11A
0
20
40
60
80
120
RG
0
500
1000
1500
2000
A/µs
3000
di/dt(on)
di/dt(off)


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