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SPA11N60C3 Datasheet(PDF) 7 Page - Infineon Technologies AG

Part No. SPA11N60C3
Description  Cool MOS™ Power Transistor
Download  14 Pages
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Maker  INFINEON [Infineon Technologies AG]
Homepage  http://www.infineon.com
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SPA11N60C3 Datasheet(HTML) 7 Page - Infineon Technologies AG

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2003-07-01
Page 7
SPP11N60C3, SPB11N60C3
SPI11N60C3, SPA11N60C3
Final data
9 Typ. drain-source on resistance
RDS(on)=f(ID)
parameter: Tj=150°C, VGS
0
2
4
6
8
10
12
14
16
A
20
ID
0.4
0.6
0.8
1
1.2
1.4
1.6
2
4V
4.5V
5V
5.5V
6V
6.5V
8V
20V
10 Drain-source on-state resistance
RDS(on) = f (Tj)
parameter : ID = 7 A, VGS = 10 V
-60
-20
20
60
100
°C
180
Tj
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2.1
SPP11N60C3
typ
98%
11 Typ. transfer characteristics
ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 10 µs
0
2
4
6
8
10
12
V
15
VGS
0
4
8
12
16
20
24
28
32
A
40
25°C
150°C
12 Typ. gate charge
VGS = f (QGate)
parameter: ID = 11 A pulsed
0
10
20
30
40
50
nC
70
QGate
0
2
4
6
8
10
12
V
16
SPP11N60C3
0,8 VDS max
DS max
V
0,2


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