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SPP07N60C3 Datasheet(PDF) 1 Page - Infineon Technologies AG

Part No. SPP07N60C3
Description  Cool MOS™ Power Transistor
Download  14 Pages
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Maker  INFINEON [Infineon Technologies AG]
Homepage  http://www.infineon.com
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SPP07N60C3 Datasheet(HTML) 1 Page - Infineon Technologies AG

 
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2004-04-07
Rev. 2.1
Page 1
SPP07N60C3, SPB07N60C3
SPI07N60C3, SPA07N60C3
Cool MOS™ Power Transistor
VDS @ Tjmax
650
V
RDS(on)
0.6
ID
7.3
A
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• High peak current capability
• Improved transconductance
• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
P-TO262-3-1
P-TO220-3-1
P-TO220-3-31
P-TO263-3-2
2
P-TO220-3-1
2 3
1
P-TO220-3-31
1
2
3
Marking
07N60C3
07N60C3
07N60C3
07N60C3
Type
Package
Ordering Code
SPP07N60C3
P-TO220-3-1
Q67040-S4400
SPB07N60C3
P-TO263-3-2
Q67040-S4394
SPI07N60C3
P-TO262-3-1
Q67040-S4424
SPA07N60C3
P-TO220-3-31 Q67040-S4409
Maximum Ratings
Parameter
Symbol
Value
Unit
SPP_B_I
SPA
Continuous drain current
TC = 25 °C
TC = 100 °C
ID
7.3
4.6
7.31)
4.61)
A
Pulsed drain current, tp limited by Tjmax
ID puls
21.9
21.9
A
Avalanche energy, single pulse
ID=5.5A, VDD=50V
EAS
230
230
mJ
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=7.3A, VDD=50V
EAR
0.5
0.5
Avalanche current, repetitive tAR limited by Tjmax
IAR
7.3
7.3
A
Gate source voltage static
VGS
±20
±20
V
Gate source voltage AC (f >1Hz)
VGS
±30
±30
Power dissipation, TC = 25°C
Ptot
83
32
W
Operating and storage temperature
Tj , Tstg
-55...+150
°C


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