RT5P234C datasheet(1/3 Pages) ISAHAYA

Part #	RT5P234C

Description	Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type

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Manufacturer	ISAHAYA [Isahaya Electronics Corporation]

Direct Link	http://www.idc-com.co.jp

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RT5P234C

Transistor With Resistor

For Switching Application

Silicon PNP Epitaxial Type

ISAHAYA ELECTRONICS CORPORATION

DESCRIPTION

RT5P234C is a one chip transistor with built-in bias

resistor, NPN type is RT5N234C.

FEATURE

Built-in bias resistor （R1=2.2kΩ, R2=10kΩ）

High collector current （Ic=-0.5A）

Mini package for easy mounting

APPLICATION

Inverted circuit, Switching circuit, Interface circuit,

Driver circuit

OUTLINE DRAWING

Unit: mm

MAXIMUM RATING (Ta=25℃)

SYMBOL

PARAMETER

RATING

UNIT

VCBO

Collector to Base voltage

-50

V

VEBO

Emitter to Base voltage

-5

V

VIN

Input voltage

-12

V

VCEO

Collector to Emitter voltage

-50

V

IC

Collector current

-500

mA

PC

Collector dissipation(Ta=25℃)

200

mW

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-55～＋150

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃)

SYMBOL

PARAMETER

TEST CONDITION

LIMIT

UNIT

MIN

TYP

MAX

V I(on)

Input on voltage

VCE=-0.3V，IC=-20mA

―

-2.0

V

V I(off)

Input off voltage

VCE=-5V，IC=-100µA

-0.3

―

V

VCE(sat)

C to E saturation voltage

IC=-50mA，IB=-2.5mA

―

-0.1

-0.3

V

IBE

B to E current

VBE=-5V

―

-3.6

mA

ICES

Collector cut off current

VCE=-50V，VBE=0V

―

-0.5

μ

A

GI

DC forward current gain

VCE=-5V，IC=-50mA

56

―

R1

Input resistor

―

1.54

2.2

2.86

kΩ

R2/R1

Resistor ratio

―

3.6

4.5

5.5

―

fT

Gain band width product

VCE=-10V，IE=5mA，f=100MHz

―

150

―

MHz

MARKING

P ７

.

0.65

1.5

0.65

2.8

①

②

③

JEITA：SC-59

JEDEC：Similar to TO-236

Terminal Connector

①：BASE

②：EMITTER

③：COLLECTOR

C

(OUT)

E

(GND)

B

(IN)

R1

R2

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