SPP02N60S5 datasheet(6/10 Pages) INFINEON

Part #	SPP02N60S5

Description	Cool MOS??Power Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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6 / 10 page

2004-03-30

Rev. 2.1

Page 6

SPP02N60S5

SPB02N60S5

5 Typ. transfer characteristics

ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max

parameter: tp = 10 µs

0

4

8

12

VGS

20

V

0

1

2

3

4

A

6

6 Typ. gate charge

VGS = f (QGate)

parameter: ID = 1.8 A pulsed

0

1

2

3

4

5

6

7

8

nC

10

QGate

0

2

4

6

8

10

12

V

16

SPP02N60S5

0.2 V

DS max

0.8 V

DS max

7 Forward characteristics of body diode

IF = f (VSD)

parameter: Tj , tp = 10 µs

0

0.4

0.8

1.2

1.6

2

2.4

V

3

VSD

-2

10

-1

10

0

10

1

10

A

SPP02N60S5

T

j = 25 °C typ

T

j = 25 °C (98%)

T

j = 150 °C typ

T

j = 150 °C (98%)

8 Avalanche SOA

IAR = f (tAR)

par.: Tj ≤ 150 °C

10

-3

10

-2

10

-1

10

0

10

1

10

2

10

4

µs

tAR

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

A

2

Tj(START)=25°C

Tj(START)=125°C

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