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SPN04N60C2 Datasheet(PDF) 3 Page - Infineon Technologies AG

Part No. SPN04N60C2
Description  Cool MOS™ Power Transistor
Download  10 Pages
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Maker  INFINEON [Infineon Technologies AG]
Homepage  http://www.infineon.com
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SPN04N60C2 Datasheet(HTML) 3 Page - Infineon Technologies AG

 
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2002-07-29
Page 3
SPN04N60C2
Final data
Electrical Characteristics , at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Characteristics
Transconductance
gfs
VDS≥2*ID*RDS(on)max,
ID=0.65A
-
1
-
S
Input capacitance
Ciss
VGS=0V, VDS=25V,
f=1MHz
-
600
-
pF
Output capacitance
Coss
-
325
-
Reverse transfer capacitance
Crss
-
15
-
Effective output capacitance, 1)
energy related
Co(er)
VGS=0V,
VDS=0V to 480V
-
20
-
pF
Effective output capacitance, 2)
time related
Co(tr)
-
35
-
Turn-on delay time
td(on)
VDD=380V, VGS=0/13V,
ID=0.8A, RG=18Ω,
Tj=125°C
-
10
-
ns
Rise time
tr
-
30
-
Turn-off delay time
td(off)
-
60
-
Fall time
tf
-
30
-
Gate Charge Characteristics
Gate to source charge
Qgs
VDD=350V, ID=0.8A
-
4.1
-
nC
Gate to drain charge
Qgd
-
9.2
-
Gate charge total
Qg
VDD=350V, ID=0.8A,
VGS=0 to 10V
-
17
-
Gate plateau voltage
V(plateau) VDD=350V, ID=0.8A
-
7.5
-
V
1C
o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.
2C
o(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.


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