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SPB35N10 Datasheet(PDF) 2 Page - Infineon Technologies AG |
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SPB35N10 Datasheet(HTML) 2 Page - Infineon Technologies AG |
2 / 8 page 2002-01-31 Page 2 Preliminary data SPI35N10 SPP35N10,SPB35N10 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 1 K/W Thermal resistance, junction - ambient, leaded RthJA - - 62 SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area F) RthJA - - - - 62 40 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage VGS=0V, ID=1mA V(BR)DSS 100 - - V Gate threshold voltage, VGS = VDS ID=83µA VGS(th) 2.1 3 4 Zero gate voltage drain current VDS=100V, VGS=0V, Tj=25°C VDS=100V, VGS=0V, Tj=125°C IDSS - - 0.01 1 1 100 µA Gate-source leakage current VGS=20V, VDS=0V IGSS - 1 100 nA Drain-source on-state resistance VGS=10V, ID=26.4A RDS(on) - 36 44 m 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. |
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