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BCR10PM Datasheet(PDF) 3 Page - Mitsubishi Electric Semiconductor

Part # BCR10PM
Description  MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

BCR10PM Datasheet(HTML) 3 Page - Mitsubishi Electric Semiconductor

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Feb.1999
23
10–1
57 100 23 5 7 101 23 5 7 102
3.5
3.0
2.5
2.0
1.5
1.0
0.5
4.0
0
23
102
57 103 23 5
100
23
101
57 102 23 5 7 103 23 5 7 104
102
7
5
3
2
101
7
5
3
2
7
5
3
2
10–1
VGD = 0.2V
PGM = 5W
VGM = 10V
VGT = 1.5V
IGM = 2A
IRGT I
IFGT I, IRGT III
PG(AV) =
0.5W
101
103
7
5
3
2
–60
–20
20
102
7
5
3
2
60
100
140
4
4
–40
0
40
80
120
TYPICAL EXAMPLE
101
103
7
5
3
2
–60
–20
20
102
7
5
3
2
60
100
140
4
4
–40
0
40
80
120
IFGT I
IRGT I, IRGT III
TYPICAL EXAMPLE
MAXIMUM ON-STATE POWER
DISSIPATION
RMS ON-STATE CURRENT (A)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
CONDUCTION TIME
(CYCLES AT 60Hz)
GATE CURRENT (mA)
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO AMBIENT)
CONDUCTION TIME
(CYCLES AT 60Hz)
103
10–1
103
104
102
7
5
3
2
100
7
5
3
2
101
7
5
3
2
7
5
3
2
10123 5 7
23 5 7
102
105
23 5 7
23 5 7
NO FINS
16
12
6
4
2
14
10
8
0
16
0
24
8
6
101214
360°
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
GATE CHARACTERISTICS
MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR10PM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE


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