SPD50P03L datasheet(3/8 Pages) INFINEON

Part #	SPD50P03L

Description	OptiMOS-P Power - Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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3 / 8 page

2001-12-06

Page 3

Preliminary data

SPD50P03L

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Conditions

Values

Unit

min.

typ.

max.

Dynamic Characteristics

Transconductance

gfs

çVDSç≥2*çIDç*RDS(on)max

ID=-50A

47

94

-

S

Input capacitance

Ciss

VGS=0, VDS=-25V,

f=1MHz

-

4560

-

pF

Output capacitance

Coss

-

1178

-

Reverse transfer capacitance

Crss

-

965

-

Turn-on delay time

td(on)

VDD=-15V, VGS=-10V,

ID=-1A, RG=6Ω

-

14.8

22

ns

Rise time

tr

-

21.7

32

Turn-off delay time

td(off)

-

139

208

Fall time

tf

-

104

156

Gate Charge Characteristics

Gate to source charge

Qgs

VDD=-24V, ID=-50A

-

-12.7

-17

nC

Gate to drain charge

Qgd

-

-40

-60

Gate charge total

Qg

VDD=-24V, ID=-50A,

VGS=0 to -10V

-

-119

-178

Gate plateau voltage

V(plateau) VDD=-24V, ID=-50A

-

-2.7

-

V

Reverse Diode

Inverse diode continuous

forward current

IS

TC=25°C

-

-50

A

Inverse diode direct current,

pulsed

ISM

-

-200

Inverse diode forward voltage

VSD

VGS=0, |IF| = |ID|

-

-1.1

-1.65

V

Reverse recovery time

trr

VR=-15V, |IF| = |lD|,

diF/dt=100A/µs

-

38

47

ns

Reverse recovery charge

Qrr

-

46

57

nC

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SPD50P03L Datasheet(PDF) 3 Page - Infineon Technologies AG

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