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SPD35N10 Datasheet(PDF) 3 Page - Infineon Technologies AG |
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SPD35N10 Datasheet(HTML) 3 Page - Infineon Technologies AG |
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3 / 8 page  2002-01-30 Page 3 Preliminary data SPD35N10 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Dynamic Characteristics Transconductance gfs VDS2*ID*RDS(on)max , ID=26.4A 12 23 - S Input capacitance Ciss VGS=0V, VDS=25V, f=1MHz - 1180 1570 pF Output capacitance Coss - 245 326 Reverse transfer capacitance Crss - 137 206 Turn-on delay time td(on) VDD=50V, VGS=10V, ID=35A, RG=7 - 12.2 18.3 ns Rise time tr - 63 95 Turn-off delay time td(off) - 39 59 Fall time tf - 23 34 Gate Charge Characteristics Gate to source charge Qgs VDD=80V, ID=35A - 6.5 8.6 nC Gate to drain charge Qgd - 27 41 Gate charge total Qg VDD=80V, ID=35A, VGS=0 to 10V - 49 65 Gate plateau voltage V(plateau) VDD=80V, ID=35A - 6.1 - V Reverse Diode Inverse diode continuous forward current IS TC=25°C - - 35 A Inverse diode direct current, pulsed ISM - - 140 Inverse diode forward voltage VSD VGS=0V, IF=35A - 0.95 1.25 V Reverse recovery time trr VR=50V, IF=lS, diF/dt=100A/µs - 80 100 ns Reverse recovery charge Qrr - 230 290 nC |
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Similar Description - SPD35N10 |
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